FinFET device and methods of forming

A fin field effect transistor (finFET) device comprising:

• a semiconductor fin disposed between isolation regions;
• a gate stack over and along sidewalls of a channel region of the semiconductor fin, wherein the channel region is doped with carbon;
• a source/drain region adjacent the semiconductor fin;
• a carbon-doped gate spacer disposed along a sidewall of the gate stack;
• a carbon film over the carbon-doped gate spacer, wherein the carbon film extends along the sidewall of the gate stack;
• and
• a first carbon-doped region under the carbon-doped gate spacer.

A fin field effect transistor (finFET) device comprising:

• a semiconductor fin extending from a semiconductor substrate;
• a gate stack over and along sidewalls of the semiconductor fin;
• a carbon-comprising gate spacer disposed along a sidewall of the gate stack;
• a lightly doped drain (LDD) region under the carbon-comprising gate spacer, wherein the LDD region comprises carbon;
• an epitaxial source/drain region adjacent the LDD region;
• and
• carbon-doped semiconductor liner disposed along sidewalls and a bottom surface of the epitaxial source/drain region, wherein the carbon-doped semiconductor liner is disposed between the LDD region and a sidewall of the epitaxial source/drain region along a line parallel to a major surface of the semiconductor substrate, the carbon-doped semiconductor liner having a different concentration of carbon than the LDD region.