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US 10,770,569 B2Granted
Semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWei-Yang Lo, Shih-Hao Chen, Mu-Tsang Lin, Tung-Wen Cheng
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Abstract
A transistor includes a semiconductive fin having a channel portion, a gate stack over the channel portion of the semiconductive fin, source and drain structures on opposite sides of the gate stack and adjoining the semiconductive fin, and a sidewall structure extending along sidewalls of a body portion of the source structure. The source structure has a curved top, and the source structure has a top portion protruding over a top of the sidewall structure.
Claims20
A transistor, comprising:
- a semiconductive fin comprising a channel portion;
- a gate stack over the channel portion of the semiconductive fin;
- source and drain structures on opposite sides of the gate stack and adjoining the semiconductive fin, wherein the source structure has a curved top;
- and
- a sidewall structure extending substantially along sidewalls of a body portion of the source structure, wherein the source structure has a top portion protruding over a top of the sidewall structure.
2 more elements
A transistor, comprising:
- a semiconductive fin comprising a channel portion;
- a gate stack over the channel portion of the semiconductive fin;
- and
- source and drain structures on opposite sides of the gate stack and adjoining the semiconductive fin, wherein each of the source and drain structures has a side surface, the side surface of each of the source and drain structures has a first segment extending upwardly from a sidewall of the semiconductive fin, a second segment extending upwardly from the first segment and outwardly in a direction from a bottom to a top of the second segment, and a third segment extending upwardly from the second segment and inwardly in a direction from a bottom to a top of the third segment, and the second segment of the side surface of each of the source and drain structures is curved.
1 more element
A transistor, comprising:
- a semiconductive fin comprising a channel portion;
- a gate stack over the channel portion of the semiconductive fin;
- source and drain structures on opposite sides of the gate stack and adjoining the semiconductive fin, wherein the source structure comprises a p-type dopant;
- and
- a sidewall structure extending substantially along sidewalls of a body portion of the source structure, wherein the source structure has a top portion protruding over a top of the sidewall structure.
2 more elements
Dependencies are inferred from the claim text.