Method to remove III-V materials in high aspect ratio structures

A fin structure processing method, comprising:

• removing a portion of a first fin of a plurality of fins formed on a substrate to expose a surface of a remaining portion of the first fin, wherein the fins are adjacent to dielectric material structures formed on the substrate;
• performing a deposition operation to form features on the surface of the remaining portion of the first fin by depositing a Group III-V semiconductor material in a substrate processing environment;
• planarizing the Group III-V semiconductor material by a chemical mechanical polishing process;
• performing an etching operation to etch the features with an etching gas to form a plurality of openings between adjacent dielectric material structures, wherein the etching operation is performed in the same chamber as the deposition operation, and wherein the etching qas is delivered to the substrate processing environment with a hydrogen containing gas, a carrier gas, or combinations thereof;
• and
• forming a fill material on the surface of the remaining portion of the first fin, wherein the fill material is formed within a corresponding opening of the plurality of openings.

A fin structure processing method, comprising:

• removing a portion of a first fin of a plurality of fins formed on a substrate to expose a surface of a remaining portion of the first fin, wherein the fins are adjacent to dielectric material structures formed on the substrate;
• performing a deposition operation to form features on the surface of the remaining portion of the first fin by depositing a Group III-V semiconductor material in a substrate processing environment;
• planarizing the Group III-V semiconductor material by a chemical mechanical polishing process;
• performing an etching operation to etch the features with an etching gas to form a plurality of openings between adjacent dielectric material structures, wherein the etching operation is performed in the same chamber as the deposition operation and wherein the etching gas is HCl;
• delivering a hydrogen containing gas, a carrier gas, or a combination thereof, to the substrate processing environment;
• and
• forming a fill material on the surface of the remaining portion of the first fin, wherein the fill material is formed within a corresponding opening of the plurality of openings.

A fin structure processing method, comprising:

• removing a portion of a first fin of a plurality of fins formed on a substrate to expose a surface of a remaining portion of the first fin, wherein the fins are adjacent to dielectric material structures formed on the substrate;
• performing a deposition operation to form features on the surface of the remaining portion of the first fin by depositing a Group III-V semiconductor material in a substrate processing environment;
• and performing an etching operation to etch the features with an etching gas to form a plurality of openings between adjacent dielectric material structures, wherein the etching operation is performed in the same chamber as the deposition operation;
• and
• removing a species from an effluent stream flowing from the substrate processing environment by a chamber abatement apparatus.