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US 10,770,566 B2Granted
Unique gate cap and gate cap spacer structures for devices on integrated circuit products
AssigneeGlobalfoundries Inc.
InventorsJulien Frougier, Ruilong Xie, Chanro Park, Kangguo Cheng
Life of this patent
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Abstract
A device is disclosed that includes an active layer, a gate structure positioned above a channel region of the active layer and a first sidewall spacer positioned adjacent the gate structure. The device also includes a gate cap layer positioned above the gate structure and an upper spacer that contacts sidewall surfaces of the gate cap layer, a portion of an upper surface of the gate structure and an inner surface of the first sidewall spacer.
Claims20
A device, comprising:
- an active layer;
- a gate structure positioned above a channel region of the active layer;
- a first sidewall spacer positioned adjacent the gate structure;
- a gate cap layer positioned above the gate structure, the gate cap layer comprising an insulating material;
- and
- an upper spacer contacting sidewall surfaces of the gate cap layer, a portion of an upper surface of the gate structure and an inner surface of the first sidewall spacer.
3 more elements
A device, comprising:
- an active layer;
- a gate structure positioned above a channel region of the active layer, the gate structure having a first width in a direction corresponding to a gate length direction of the device, as measured at the upper surface of the gate structure;
- a first sidewall spacer positioned adjacent the gate structure;
- a gate cap layer positioned above the gate structure, the gate cap layer having a second width in a direction corresponding to the gate length direction of the device, as measured at the upper surface of the gate structure, wherein the second width is less than the first width;
- and
- an upper spacer contacting sidewall surfaces of the gate cap layer, a portion of an upper surface of the gate structure and a portion of the first sidewall spacer.
3 more elements
A device, comprising:
- an active layer;
- a gate structure positioned above a channel region of the active layer, the gate structure having a first width in a direction corresponding to a gate length direction of the device, as measured at the upper surface of the gate structure;
- a first sidewall spacer positioned adjacent the gate structure;
- a gate cap layer positioned above the gate structure, the gate cap layer having a second width in a direction corresponding to the gate length direction of the device, as measured at the upper surface of the gate structure, wherein the second width is less than the first width;
- and
- an upper spacer contacting sidewall surfaces of the gate cap layer, a portion of an upper surface of the gate structure and an inner surface of the first sidewall spacer.
3 more elements
Dependencies are inferred from the claim text.