US 10,770,556 B2 · Fluorinated graphene passivated AlGaN/GaN-based HEMT device and manufacturing method

Abstract

An AlGaN/GaN HEMT based on fluorinated graphene passivation and a manufacturing method thereof. Monolayer graphene (108) is transferred to an AlGaN (104) surface, is treated by using fluoride ions and then is insulated to thereby replace a conventional nitride passivation layer. Then, a high-k material (109) is grown on the graphene (108), and the high-k material (109) and the graphene (108) are jointly used as a gate dielectric for preparing an AlGaN/GaN metal-insulator-semiconductor (MIS) HEMT. Compared with the traditional passivation structure, the graphene (108) has the advantages of small physical thickness (sub-nanometer scale) and low additional threshold voltage. The structure and the method are simple, the effect is remarkable and the application prospect in technical fields of microelectronics and solid-state electronics is wide.

Claims11

Dependent claims

An AlGaN/GaN HEMT based on fluorinated graphene passivation, characterized in that the HEMT comprises:

a substrate;
a GaN layer located above the substrate;
an AlGaN layer bonded to the GaN layer, a two-dimensional electron gas surface formed by an interface between the AlGaN layer and the GaN layer;
a source and a drain formed at two ends of the AlGaN layer;
an insulated graphene passivation layer bonded to a surface of the AlGaN layer, wherein the insulated graphene passivation layer is fluorinated;
a gate dielectric layer bonded to a surface of the insulated graphene passivation layer;
and
a gate metal layer bonded to a surface of the gate dielectric layer.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application

15/772,033Filed 4 Mar 2016

Priority

CN 2015 1 077238412 Nov 2015

Published

US 2019/0035901 A131 Jan 2019

Granted

8 Sep 2020

Term ends

Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10D 64/118
Electrodes of devices having potential barriers: electrodes comprising insulating layers having particular dielectric or electrostatic properties,…
H10D 30/015
Manufacture or treatment: of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
H10D 30/475
High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]: having wider bandgap layer formed on top of lower bandgap…
H10D 30/4755
Having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs: having wide bandgap…

Fluorinated graphene passivated AlGaN/GaN-based HEMT device and manufacturing method

Life of this patent

Fluorinated graphene passivated AlGaN/GaN-based HEMT device and manufacturing method

Life of this patent

Abstract

Claims11