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US 10,770,553 B2Granted
Layered structure, semiconductor device including layered structure, and semiconductor system including semiconductor device
AssigneeFlosfia Inc.
InventorsTokiyoshi Matsuda, Takashi Shinohe, Shingo Yagyu, Takuto Igawa
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Abstract
In a first aspect of a present inventive subject matter, a layered structure includes a first semiconductor layer containing as a major component an ε-phase oxide semiconductor crystal; and a second semiconductor layer positioned on the first semiconductor layer and containing as a major component an oxide semiconductor crystal with a tetragonal crystal structure.
Claims20
A layered structure, comprising:
- a first semiconductor layer comprising as a major component an ε-phase oxide semiconductor crystal;
- and
- a second semiconductor layer positioned on the first semiconductor layer and comprising as a major component an oxide semiconductor crystal with a tetragonal crystal structure.
A semiconductor device, comprising:
- a layered structure, comprising a first semiconductor layer that comprises an ε-phase oxide semiconductor crystal and a second semiconductor layer that is positioned on the first semiconductor layer and comprises an oxide semiconductor crystal with a tetragonal crystal structure;
- and
- a heterojunction between the first semiconductor layer and the second semiconductor layer.
A semiconductor device, comprising:
- a layered structure, comprising a first semiconductor layer that comprises an ε-phase oxide semiconductor crystal and a second semiconductor layer that is positioned on the first semiconductor layer and comprises an oxide semiconductor crystal with a tetragonal crystal structure;
- a first electrode electrically connected to the layered structure;
- and
- a second electrode electrically connected to the layered structure.
1 more element
A system, comprising:
- a circuit board;
- and
- a semiconductor device, comprising a layered structure that comprises a first semiconductor layer comprising an ε-phase oxide semiconductor crystal, and a second semiconductor layer positioned on the first semiconductor layer and comprising an oxide semiconductor crystal with a tetragonal crystal structure, a first electrode electrically connected to the layered structure, and a second electrode electrically connected to the layered structure, the semiconductor device being electrically connected to the circuit board.
Dependencies are inferred from the claim text.