P-I-N diode and connected group III-N device and their methods of fabrication

A group III-Nitride (III-N) semiconductor structure, comprising:

• a group III-N semiconductor material disposed on a substrate;
• a group III-N transistor structure comprising:
• a raised n-doped raised drain structure disposed on the group III-N semiconductor material;
• a raised n-doped raised source structure disposed on the group III-N semiconductor material;
• a mobility enhancement layer disposed on the group III-N semiconductor material, between the n-doped raised source structure and the n-doped raised drain structure;
• a polarization charge inducing layer disposed above the mobility enhancement layer between the n-doped raised source structure and the n-doped raised drain structure, the polarization charge inducing layer having a first portion and a second portion separated by a gap;
• a gate dielectric layer disposed on the mobility enhancement layer in the gap;
• a gate electrode disposed on the gate dielectric layer above the gap between the n-doped raised drain structure and the n-doped raised source structure;
• a P-i-N diode structure comprising:
• the raised n-doped drain structure disposed on the group III-N semiconductor material;
• an intrinsic group III-N semiconductor material disposed on the n-doped raised drain structure;
• a p-doped group III-N semiconductor material disposed on the intrinsic group III-N semiconductor material;
• a first electrode connected to the p-doped group III-N semiconductor material;
• and
• a second electrode electrically coupled to the n-doped raised drain structure.

A method of fabricating a P-i-N diode structure, the method comprising:

• providing a group III-N semiconductor material on a substrate;
• forming an n-doped raised drain structure on the group III-N semiconductor material;
• forming an intrinsic group III-N semiconductor material on the n-doped raised drain structure;
• forming a p-doped group III-N semiconductor material disposed on the intrinsic group III-N semiconductor material;
• forming a first electrode on the p-doped group III-N semiconductor material;
• and
• forming a second electrode on the n-doped raised drain structure.

A method of fabricating group III-Nitride (III-N) semiconductor structure, the method comprising:

• providing a group III-N semiconductor material on a substrate;
• forming a mobility enhancement layer on the group III-N semiconductor material;
• forming a polarization charge inducing layer on the mobility enhancement layer;
• forming an n-doped raised source structure and an n-doped raised drain structure;
• forming an intrinsic group III-N semiconductor material on the n-doped raised drain structure;
• forming a p-doped group III-N semiconductor material disposed on the intrinsic group III-N semiconductor material;
• forming a recess in the polarization charge inducing layer, the recess providing a gap separating a first portion of the polarization charge inducing layer from a second portion of the polarization charge inducing layer;
• forming a gate dielectric layer above the mobility enhancement layer in the gap;
• forming a gate electrode on the gate dielectric layer;
• forming a first electrode on the n-doped raised drain region;
• and
• forming a second electrode on the p-doped group III-N semiconductor material.