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US 10,770,545 B2Granted
Quantum dot devices
AssigneeIntel Corporation
InventorsHubert C. George, Ravi Pillarisetty, Jeanette M. Roberts, Nicole K. Thomas, James S. Clarke
Life of this patent
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Abstract
Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack; an insulating material disposed above the quantum well stack, wherein the insulating material includes a trench; and a gate metal disposed on the insulating material and extending into the trench.
Claims19
A device, comprising:
- a quantum well stack of a quantum dot device;
- an insulating material above the quantum well stack, wherein the insulating material includes a first trench and a second trench;
- a first gate metal on the insulating material and extending into the first trench;
- and
- a second gate metal on the insulating material and extending into the second trench.
2 more elements
A method of operating a quantum dot device, comprising:
- providing electrical signals to one or more gates at least partially in a first trench in an insulating material to cause a first quantum dot to form in a quantum well stack below the first trench;
- providing electrical signals to one or more gates at least partially in a second trench in the insulating material to cause a second quantum dot to form in the quantum well stack;
- and
- sensing a quantum state of the first quantum dot with the second quantum dot.
1 more element
A method of manufacturing a quantum dot device, comprising:
- providing a quantum well stack on a substrate;
- providing an insulating material above the quantum well stack, wherein the insulating material includes a trench;
- and
- forming gates on the insulating material, wherein the gates extend into the trench.
1 more element
A quantum computing device, comprising:
- a quantum processing device, wherein the quantum processing device includes an insulating material having first and second trenches that extend toward a quantum well stack, gate metal of an active quantum dot formation gate on the insulating material and extending into the first trench, and gate metal of a read quantum dot formation gate on the insulating material and extending into the second trench;
- a non-quantum processing device, coupled to the quantum processing device, to control voltages applied to the active quantum dot formation gates and the read quantum dot formation gate;
- and
- a memory device to store data generated by quantum dots read by the read quantum dot formation gates during operation of the quantum processing device.
1 more element
Dependencies are inferred from the claim text.