Semiconductor device including super junction structure

A semiconductor device, comprising:

• transistor cells in a transistor cell area of a semiconductor body;
• a super junction structure in the semiconductor body, the super junction structure comprising a plurality of drift sub-regions and compensation sub-regions of opposite first and second conductivity types, respectively, and alternately arranged along a lateral direction, wherein each of the drift sub-regions include first dopants of the first conductivity type partially compensated by second dopants of the second conductivity type;
• and
• a termination area outside the transistor cell area between an edge of the semiconductor body and the transistor cell area, the termination area comprising first and third termination sub-regions of the first conductivity type, respectively, and a second termination sub-region of the second conductivity type sandwiched between the first and the third termination sub-regions along a vertical direction perpendicular to a first surface of the semiconductor body,
• wherein the semiconductor device further comprises a fifth termination sub-region of the second conductivity type sandwiched between the third termination sub-region and a semiconductor substrate of the first conductivity type.

A semiconductor device, comprising:

• transistor cells in a transistor cell area of a semiconductor body;
• a super junction structure in the semiconductor body, the super junction structure comprising a plurality of drift sub-regions and compensation sub-regions of opposite first and second conductivity types, respectively, and alternately arranged along a lateral direction, wherein each of the drift sub-regions include first dopants of the first conductivity type partially compensated by second dopants of the second conductivity type;
• and
• a termination area outside the transistor cell area between an edge of the semiconductor body and the transistor cell area, the termination area comprising first and third termination sub-regions of the first conductivity type, respectively, and a second termination sub-region of the second conductivity type sandwiched between the first and the third termination sub-regions along a vertical direction perpendicular to a first surface of the semiconductor body,
• wherein the second termination sub-region is electrically floating.