Fingered capacitor with low-K and ultra-low-K dielectric layers

An integrated circuit comprising a plurality of fingers forming a fingered capacitor, the fingered capacitor comprising:

• a first dielectric cap layer;
• a first dielectric layer formed over the dielectric cap layer and having a first K value;
• a second dielectric layer formed over the first dielectric layer and having a second K value lower than the first K value, wherein the fingers are formed in the first and second dielectric layers;
• a second dielectric cap layer formed over the fingers and the second dielectric layer;
• and
• a third dielectric layer formed directly over the second dielectric layer and the fingers, wherein the second dielectric cap layer is formed over the third dielectric layer.

An integrated circuit comprising a plurality of fingers forming a fingered capacitor, the fingered capacitor comprising:

• a first dielectric cap layer;
• a first dielectric layer formed over the dielectric cap layer and having a first K value;
• a second dielectric layer formed over the first dielectric layer and having a second K value lower than the first K value, wherein the fingers are formed in the first and second dielectric layers;
• a second dielectric cap layer formed over the fingers and the second dielectric layer;
• and
• a third dielectric layer formed over the second dielectric layer and the fingers, wherein the second dielectric cap layer is formed over the third dielectric layer, the second dielectric cap layer is formed directly over the third dielectric layer.