Method and structure for dual sheet resistance trimmable thin film resistors

A method of forming an electronic device, comprising:

• forming an opening through a dielectric layer located over a first resistive layer with a first thickness;
• depositing a second resistive layer over said dielectric layer and into said opening, said second resistive layer having a greater second thickness;
• and
• removing a portion of said second resistive layer, thereby forming a first portion of said second resistive layer over said dielectric layer, and a noncontiguous second portion of said second resistive layer in contact with said first resistive layer.

A method of forming an electronic device, comprising:

• forming a first opening through a dielectric layer located over a first resistive layer with a first sheet resistance;
• forming a second opening through the dielectric layer over a noncontiguous portion of the first resistive layer;
• depositing a second resistive layer over the dielectric layer and into the first and second openings, the second resistive layer having a second sheet resistance;
• and
• removing a portion of the second resistive layer, thereby forming a first portion of the second resistive layer over the dielectric layer, and a noncontiguous second portion of the second resistive layer in contact with the first resistive layer.