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US 10,770,481 B2Granted
Semiconductor device and method for manufacturing the same
AssigneeNuFlare Technology, Inc.
InventorKiyotaka Miyano
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes: a silicon substrate having a first plane with a first plane orientation; a silicon oxide layer provided on a first region of the silicon substrate; a first silicon layer provided on the silicon oxide layer, the first silicon layer having a second plane with a second plane orientation different from the first plane orientation; and a wide-bandgap compound semiconductor layer having a hexagonal crystal structure.
Claims11
A semiconductor device comprising:
- a silicon substrate having a first plane with a first plane orientation;
- a silicon oxide layer provided on a first region of the silicon substrate;
- a first silicon layer provided on the silicon oxide layer, the first silicon layer having a second plane with a second plane orientation different from the first plane orientation;
- a wide-bandgap compound semiconductor layer having a hexagonal crystal structure;
- and
- a second silicon layer provided on a second region of the silicon substrate, the second region being different from the first region,
- wherein the wide-bandgap compound semiconductor layer is provided on the first silicon layer,
- the first plane orientation is {100},
- the second plane orientation is {111} and,
- the first silicon layer is undoped.
7 more elements
A semiconductor device comprising:
- a silicon substrate having a first plane with a first plane orientation;
- a silicon oxide layer provided on a first region of the silicon substrate;
- a first silicon layer provided on the silicon oxide layer, the first silicon layer having a second plane with a second plane orientation different from the first plane orientation;
- and
- a wide-bandgap compound semiconductor layer having a hexagonal crystal structure;
- wherein the wide-bandgap compound semiconductor layer is provided on a second region of the silicon substrate, the second region being different from the first region,
- the first plane orientation is {111},
- the second plane orientation is {100}, and
- the second region of the silicon substrate is undoped.
6 more elements
Dependencies are inferred from the claim text.