Vertical type semiconductor devices and methods of manufacturing the same

A vertical type semiconductor device, comprising:

• insulation patterns on a substrate and spaced apart from each other in a first direction perpendicular to a top surface of the substrate, the insulation pattern extending a second direction parallel to the top surface of the substrate;
• channel structures on the substrate, each channel structure penetrating through the insulation patterns;
• and
• a gate structure in a gap between the insulation patterns adjacent to each other in the first direction and the channel structure, the gate structure extending in the second direction,
• the gate structure comprising:
• a first conductive pattern along a top surface and a bottom surface of the insulation patterns and the channel structure and having a slit in a surface thereof;
• and
• a second conductive pattern on the first conductive pattern to fill the slit and including a material different from the first conductive pattern,
• wherein a width at an entrance of the slit in the first direction is less than a width of an inner space of the slit in the first direction.

A vertical type semiconductor device, comprising:

• pattern structures including gate structures and insulation patterns alternately and repeatedly stacked on a substrate in a first direction perpendicular to a top surface of the substrate;
• channel structures penetrating through the insulation patterns;
• and
• a common source line between the pattern structures, extending in a second direction parallel with the top surface of the substrate and contacting the substrate, the gate structure comprising:
• a first conductive pattern having a slit parallel with the top surface of the substrate;
• and
• a second conductive pattern on the first conductive pattern filling the slit,
• wherein a width at an entrance of the slit in the first direction is less than a width of an inner space of the slit in the first direction.