Semiconductor device and method for fabricating the same

A method for fabricating a semiconductor device, the method comprising:

• forming a fin type active pattern defined by a field insulation layer, extending in a first direction, including first to third parts sequentially arranged in the first direction and upwardly protruding from a top surface of the field insulation layer;
• forming a dummy gate electrode extending in a second direction different from the first direction and crossing the fin type active pattern on the first part;
• trimming the second and third parts upwardly protruding from the top surface of the field insulation layer using the dummy gate electrode as a mask;
• forming a gate spacer formed on the second part and sidewalls of the dummy gate electrode after the trimming the second and third parts;
• forming a recess in the third part using the dummy gate electrode as a mask;
• and
• forming a source/drain filling the recess on the third part,
• wherein the second and third parts upwardly protrude from the top surface of the field insulation layer between the forming the gate spacer and after the trimming the second and third parts.