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US 10,770,464 B2Granted
Semiconductor device including bit line structure of dynamic random access memory (DRAM) and method for fabricating the same
AssigneesUnited Microelectronics Corp., Fujian Jinhua Integrated Circuit Co., Ltd.
InventorsChih-Chien Liu, Chia-Lung Chang, Tzu-Chin Wu, Wei-Lun Hsu
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Abstract
A method for fabricating semiconductor device includes the steps of: forming a bit line structure on a substrate; forming a first spacer, a second spacer, and a third spacer around the bit line structure; forming an interlayer dielectric (ILD) layer on the bit line structure; planarizing part of the ILD layer; removing the ILD layer and the second spacer to form a recess between the first spacer and the third spacer; and forming a liner in the recess.
Claims6
A semiconductor device, comprising:
- a bit line structure on a substrate;
- a first spacer around the bit line structure, wherein a bottom surface of the first spacer is even with a bottom surface of the bit line structure;
- a second spacer on a sidewall of the first spacer, wherein the second spacer comprises a bottom portion and a top portion, the bottom portion and the top portion comprise different dielectric materials, the bottom portion comprises silicon oxide and the top portion comprises silicon nitride, sidewalls of the bottom portion are vertically aligned with sidewalls of the top portion, and the bottom surface of the first spacer is lower than a bottom surface of the second spacer;
- and
- a third spacer on a sidewall of the second spacer, wherein the third spacer is asymmetrical shaped on two sides, with one side being L-shaped, while another side being I-shaped, and the first spacer extends downwardly into and contacting a shallow trench isolation disposed under the third spacer.
2 more elements
Dependencies are inferred from the claim text.