Circuit and layout for single gate type precharge circuit for data lines in memory device

An apparatus comprising:

• a first diffusion region, a second diffusion region, a third diffusion region, and a fourth diffusion region;
• a first channel region located between a portion of the first diffusion region and a portion of the third diffusion region, wherein the first channel region, the portion of the first diffusion region, and the portion of the third diffusion region form part of a first transistor;
• a second channel region located between the portion of the third diffusion region and a portion of the second diffusion region, wherein the second channel region, the portion of the third diffusion region, and the portion of the second diffusion region form part of a second transistor;
• a third channel region located between the portion of the second diffusion region and a portion of the fourth diffusion region, wherein the third channel region, the portion of the second diffusion region, and the portion of the fourth diffusion region form part of a third transistor;
• and
• a first gate located over the first, second, and third channel regions;
• a second gate disposed over a portion of the first diffusion region and a portion of the second diffusion region;
• and
• a third gate disposed over a portion of the third diffusion region and a portion of the fourth diffusion region.

An apparatus comprising:

• a first diffusion region including a first elongated portion, a second diffusion region including a second elongated portion, a third diffusion region including a third elongated portion, and a fourth diffusion region including a fourth elongated portion;
• a first channel region located between the first and third elongated portions, wherein the first channel region and the first and third elongated portions form part of a first transistor;
• a second channel region located between second and third elongated portions, wherein the second channel region and the second and third elongated portions form part of a second transistor;
• a third channel region located between the second and fourth elongated portions, wherein the third channel region and the second and fourth elongated portions form part of a third transistor;
• a gate located over the first, second, and third channel regions, wherein the gate is shared by the first, second, and third transistors;
• and
• a conductive line electrically coupled to the first and fourth diffusion regions.