Electronic device including a transistor and a variable capacitor

An electronic device comprising a first die including:

• a channel layer;
• a barrier layer contacting the channel layer;
• a first high electron mobility transistor that includes the barrier layer and the channel layer;
• and
• a first variable capacitor,
• wherein:
• a first electrode of the first variable capacitor overlies a heterojunction between the barrier layer and the channel layer, wherein the first electrode of the first variable capacitor is coupled to a source or a gate of the first high electron mobility transistor, and
• a second electrode of the first variable capacitor is coupled to a first external terminal of the first die.

An electronic device comprising a first die, wherein the first die comprises:

• a first external terminal, a second external terminal, and a third external terminal;
• a variable capacitor including a first electrode and a second electrode;
• a first diode including an anode and a cathode;
• and
• a second diode including an anode and a cathode,
• wherein:
• the first electrode of the variable capacitor is coupled to the first external terminal of the first die,
• the second electrode of the variable capacitor is coupled to the second external terminal of the first die,
• the second electrode of the variable capacitor is electrically connected to the cathode of the first diode,
• the anode of the first diode is electrically connected to an anode of the second diode, and
• the cathode of the second diode is coupled to the third external terminal of the first die.