US 10,770,438 B2 · Bonded two-die device including an integrated circuit (IC) die and a phase-change material (PCM) switch die

Abstract

In a method for wafer-to-wafer bonding, an integrated circuit (IC) wafer and a phase-change material (PCM) switch wafer are provided. The IC includes at least one active device, and has an IC substrate side and a metallization side. The PCM switch wafer has a heat spreading side and a radio frequency (RF) terminal side. A heat spreader is formed in the PCM switch wafer. In one approach, the heat spreading side of the PCM switch wafer is bonded to the metallization side of the IC wafer, then a heating element is formed between the heat spreader and a PCM in the PCM switch wafer. In another approach, a heating element is formed between the heat spreader and a PCM in the PCM switch wafer, then the RF terminal side of the PCM switch wafer is bonded to the metallization side of the IC wafer.

Claims19

Dependent claims

A bonded two-die device comprising:

an integrated circuit (IC) die including at least one active device, said IC die having an IC substrate side and a metallization side;
a phase-change material (PCM) switch die, said PCM switch die having a heat spreading side and a radio frequency (RF) terminal side, said PCM switch die including a heating element between a heat spreader and a PCM;
said heat spreading side of said PCM switch die being bonded to said metallization side of said IC die.

Dependencies are inferred from the claim text.

Facts

Application

16/672,240Filed 1 Nov 2019 · division

Priority

14 Aug 2018

Published

US 2020/0058628 A127 Feb 2020

Granted

8 Sep 2020

Term ends

Not estimatedThe source records don’t support an estimate.

Classification22 codes

H10W 90/00
Package configurations
H10B 63/10
Resistance change memory devices, e.g. resistive RAM [ReRAM] devices: phase change RAM [PCRAM, PRAM] devices
H10N 70/011
Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching: manufacture or…
H10N 70/231
Multistable switching devices, e.g. memristors: based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect

Family

Application16/103,490Parent of this continuation-in-part · filed 14 Aug 2018

Application16/103,587Parent of this continuation-in-part · filed 14 Aug 2018

Application16/103,646Parent of this continuation-in-part · filed 14 Aug 2018

Application16/114,106Parent of this continuation-in-part · filed 27 Aug 2018

Application16/161,960Parent of this continuation-in-part · filed 16 Oct 2018

Application16/413,509Parent of this division · filed 15 May 2019

US 10,461,253 B1Parent of this continuation-in-part · filed 29 Oct 2019

US 2020/0066695 A1Pre-grant publication · published 27 Feb 2020

US 10,566,321 B1Parent of this division

US 10,476,001 B1Parent of this continuation-in-part

Application16/413,509Parent of this continuation-in-part

US 10,475,993 B1Parent of this continuation-in-part

US 10,644,235 B2Parent of this continuation-in-part

US 10,707,125 B2Related patent

US 2020/0058628 A1Published application

US 2020/0058848 A1Published application

US 2020/0058854 A1Published application

US 10,770,438 B2This patent

From the US filing history. Foreign family members aren’t listed.

Bonded two-die device including an integrated circuit (IC) die and a phase-change material (PCM) switch die

Life of this patent

Bonded two-die device including an integrated circuit (IC) die and a phase-change material (PCM) switch die

Life of this patent

Abstract

Claims19