Light-emitting diode (LED) device

A light-emitting diode (LED) device comprising:

• a plurality of light-emitting structures spaced apart from each other, each light-emitting structure including a first surface and a second surface;
• a plurality of electrode layers on first surfaces of the plurality of light-emitting structures;
• a separation layer configured to isolate the plurality of light-emitting structures from each other;
• a plurality of wavelength transformers including quantum dots on second surfaces of separate, respective light-emitting structures of the plurality of light-emitting structures, the quantum dots including a group III-V compound semiconductor or a group II-VI compound semiconductor having a core-shell structure comprising a core and a shell, the core having a diameter between 1 nm and 30 nm, the shell having a thickness between 0.1 nm and 20 nm;
• and
• a partition layer between the wavelength transformers, such that the partition layer separates the wavelength transformers from each other.

A light-emitting diode (LED) device comprising:

• a plurality of light-emitting structures spaced apart from each other, each light-emitting structure including a first surface and a second surface;
• a plurality of electrode layers on first surfaces of the plurality of light-emitting structures;
• a separation layer configured to isolate the plurality of light-emitting structures from each other;
• a plurality of wavelength transformers including quantum dots on second surfaces of separate, respective light-emitting structures of the plurality of light-emitting structures;
• and
• a partition layer between the wavelength transformers, such that the partition layer separates the wavelength transformers from each other.