Semiconductor package

A semiconductor package comprising:

• a connection member having a first surface and a second surface opposing each other, the connection member including an insulating layer formed of a photoimageable dielectric material and a redistribution layer, the redistribution layer including a via penetrating through the insulating layer;
• a semiconductor chip disposed on the first surface of the connection member and including a connection pad connected to the redistribution layer;
• and
• an encapsulant disposed on the first surface of the connection member and encapsulating the semiconductor chip,
• wherein the insulating layer includes an opening through which the via penetrates, and the redistribution layer includes a seed layer disposed on a side wall of the opening and on a first surface of the insulating layer, and a plating layer disposed on the seed layer, and the via has a shape in which a width adjacent to the second surface of the connection member is greater than a width adjacent to the first surface of the connection member,
• wherein the side wall of the opening and the first surface of the insulating layer have a surface roughness greater than a surface roughness of a portion of the seed layer located on a surface of the via opposing the first surface of the insulating layer, and
• wherein an interface between the insulating layer and the seed layer constituting the via includes a first uneven surface that extends to the entire first surface of the insulating layer.

A semiconductor package, comprising:

• a semiconductor chip having a connection pad on an active surface, disposed on a connection member such that the active surface directly contacts a first surface of the connection member;
• the connection member comprising
• an insulating layer formed of a photoimageable dielectric material and comprising a via hole penetrating the insulating layer,
• a redistribution layer electrically connected to the connection pad and disposed on a first surface of the insulating layer opposite the first surface of the connection member, the redistribution layer including a via disposed in the via hole,
• wherein the redistribution layer comprises a seed layer disposed on a sidewall of the via hole and the first surface of the insulating layer, and a plating layer disposed on the seed layer, and the via has a shape in which a width adjacent to a second surface of the connection member is greater than a width adjacent to the first surface of the connection member, and
• wherein an interface between the seed layer and the insulating layer and at an interface between the seed layer and the sidewall of the via hole form a first uneven surface having a surface roughness greater than that at an interface between the seed layer and a layer underlying the via hole on a second surface of the insulating layer opposing the first surface of the insulating layer, and the first uneven surface extends to the entire first surface of the insulating layer.