Semiconductor package having a filled conductive cavity

A method of manufacturing a semiconductor package, the method comprising:

• forming a cavity in an insulative body of a frame, the insulative body having a first main surface and a second main surface opposite the first main surface, and a first plurality of metal traces at the first main surface of the insulative body;
• filling the first cavity in the insulative body with a thermally and/or electrically conductive material having a different composition than the first plurality of metal traces, the electrically conductive material providing a thermally and/or electrically conductive path between the first and the second main surfaces of the insulative body;
• and
• attaching a semiconductor die to the frame at the first main surface of the insulative body so that the semiconductor die is electrically connected to the first plurality of metal traces and to the thermally and/or electrically conductive material filling the first cavity in the insulative body,
• wherein attaching the semiconductor die to the frame at the first main surface of the insulative body comprises:
• flip-chip bonding a high-power terminal of the semiconductor die to the thermally and/or electrically conductive material filling the first cavity in the insulative body and a plurality of low power terminals of the semiconductor die to interconnect pads formed in the plurality of metal traces at the first main surface of the insulative body.

A semiconductor package, comprising:

• a frame comprising an insulative body having a first main surface and a second main surface opposite the first main surface, a first plurality of metal traces at the first main surface, and a first cavity in the insulative body;
• a thermally and/or electrically conductive material filling the first cavity in the insulative body and having a different composition than the first plurality of metal traces, the thermally and/or electrically conductive material providing a thermally and/or electrically conductive path between the first and the second main surfaces of the insulative body;
• and
• a semiconductor die attached to the frame at the first main surface of the insulative body and electrically connected to the first plurality of metal traces and to the thermally and/or electrically conductive material filling the first cavity in the insulative body,
• wherein the thermally and/or electrically conductive material filling the first cavity is not covered by a metal trace at the first main surface of the insulative body,
• wherein the semiconductor die is attached to the thermally and/or electrically conductive material at the first main surface of the insulative body,
• wherein the first cavity terminates at a metal trace at the second main surface of the insulative body,
• wherein the semiconductor die is electrically connected to the metal trace that terminates the first cavity at the second main surface of the insulative body through the thermally and/or electrically conductive material filling the first cavity.

A semiconductor package, comprising:

• a frame comprising an insulative body having a first main surface and a second main surface opposite the first main surface, a first plurality of metal traces at the first main surface, and a first cavity in the insulative body;
• a thermally and/or electrically conductive material filling the first cavity in the insulative body and having a different composition than the first plurality of metal traces, the thermally and/or electrically conductive material providing a thermally and/or electrically conductive path between the first and the second main surfaces of the insulative body;
• and
• a semiconductor die attached to the frame at the first main surface of the insulative body and electrically connected to the first plurality of metal traces and to the thermally and/or electrically conductive material filling the first cavity in the insulative body,
• wherein the first cavity terminates at a metal trace at the first main surface of the insulative body,
• wherein the semiconductor die is attached to the metal trace that terminates the first cavity at the first main surface of the insulative body,
• wherein the semiconductor die is electrically connected to the thermally and/or electrically conductive material filling the first cavity through the metal trace that terminates the first cavity at the first main surface of the insulative body.

A semiconductor package, comprising:

• a frame comprising an insulative body having a first main surface and a second main surface opposite the first main surface, a first plurality of metal traces at the first main surface, and a first cavity in the insulative body;
• a thermally and/or electrically conductive material filling the first cavity in the insulative body and having a different composition than the first plurality of metal traces, the thermally and/or electrically conductive material providing a thermally and/or electrically conductive path between the first and the second main surfaces of the insulative body;
• and
• a semiconductor die attached to the frame at the first main surface of the insulative body and electrically connected to the first plurality of metal traces and to the thermally and/or electrically conductive material filling the first cavity in the insulative body,
• wherein the frame further comprises a second cavity in the insulative body,
• wherein the second cavity is smaller than and laterally spaced apart from the first cavity,
• wherein the second cavity is filled with a thermally and/or electrically conductive material having a different composition than the first plurality of metal traces and providing a thermally and/or electrically conductive path between the first and the second main surfaces of the insulative body,
• wherein the semiconductor die is electrically connected to the thermally and/or electrically conductive material filling the second cavity in the insulative body.