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US 10,770,396 B2Granted
Semiconductor structure and method for fabricating the same
AssigneeVanguard International Semiconductor Corporation
InventorsFang-Ming Lee, Sheng-Wei Fu, Chung-Yeh Lee
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Abstract
A semiconductor structure includes a substrate, an epitaxial layer disposed on the substrate, a conductive feature disposed in the epitaxial layer having a protruding portion that is higher than the epitaxial layer, and a diffusion barrier layer disposed on sidewalls of the conductive feature.
Claims18
A semiconductor structure, comprising:
- a substrate;
- an epitaxial layer disposed on the substrate;
- a conductive feature disposed in the epitaxial layer and having a protruding portion that is higher than the epitaxial layer;
- a diffusion barrier layer disposed on sidewalls of the conductive feature, wherein the diffusion barrier layer comprises a barrier oxide layer, wherein a bottom surface of the conductive feature is in direct contact with the epitaxial layer;
- and
- a source region disposed in the epitaxial layer, wherein the diffusion barrier layer contacts the source region and separates the source region from the conductive feature.
3 more elements
A method for fabricating a semiconductor structure, comprising:
- providing a substrate;
- forming an epitaxial layer on the substrate;
- forming a mask structure on the epitaxial layer, and the mask structure has an opening exposing a portion of the epitaxial layer;
- using the mask structure as an etching mask to remove the exposed portion of the epitaxial layer to form a trench;
- forming a diffusion barrier layer conformally in the trench, wherein the diffusion barrier layer comprises a barrier oxide layer;
- removing a portion of the diffusion barrier layer on a bottom surface of the trench;
- forming a conductive feature in the trench, wherein the conductive feature has a protruding portion that is higher than the epitaxial layer;
- and
- removing the mask structure.
6 more elements
Dependencies are inferred from the claim text.