Low inductance stackable solid-state switching module and method of manufacturing thereof

A method of manufacturing a half-bridge unit cell comprising:

• providing a first electronics package and a second electronics package of identical construction, each of the first and second electronics packages comprising:
• a metallized insulating substrate comprising an insulating layer and a metal layer positioned on the insulating layer;
• and
• a solid-state switching device positioned on the metallized insulating substrate and electrically coupled thereto;
• forming a plurality of through-vias in the metallized insulating substrate of each of the first and second electronics packages that extend through the metallized insulating substrate;
• vertically stacking the first electronics package with the second electronics package, with the plurality of through-vias in the metallized insulating substrate of the first electronics package being aligned with the plurality of through-vias in the metallized insulating substrate of the second electronics package;
• and
• physically and electrically coupling the first electronics package with the second electronics package to form a commutation loop in the half-bridge unit cell.

A half-bridge unit cell comprising:

• a first electronics package comprising a first wide-bandgap semiconductor switch coupled to a first metallized insulating substrate, the first wide-bandgap semiconductor switch electrically connected to a conductor layer of the first metallized insulating substrate;
• and
• a second electronics package comprising a second wide-bandgap semiconductor switch coupled to a second metallized insulating substrate, the second wide-bandgap semiconductor switch electrically connected to a conductor layer of the second metallized insulating substrate;
• wherein the first electronics package is stacked vertically with the second electronics package and electrically coupled thereto to form a commutation loop in the half-bridge unit cell, with an inductance of the commutation loop in the half-bridge unit cell being 0.5 nH or less.