Semiconductor component and method of manufacture

A semiconductor component, comprising:

• a polygonal shaped support having a surface;
• a substrate having a first portion and a second portion, a first electrically conductive layer formed on the second portion of the substrate;
• a first semiconductor chip coupled to the first portion of the substrate, the first semiconductor chip having a first surface and a second surface, a source bond pad at a first portion of the first surface, a drain bond pad at a second portion of the first surface, and a gate bond pad at a third portion of the first surface, the first semiconductor chip comprising a III-N semiconductor material;
• a first clip having a first section and a second section, the first section of the first clip coupled to the source bond pad of the first semiconductor chip and the second section of the first clip coupled to the first electrically conductive layer;
• and
• a second semiconductor chip coupled to the second section of the first clip, the second semiconductor chip having a first surface and a second surface.

A semiconductor component, comprising:

• a support having a surface and a second surface;
• an anode lead adjacent to and electrically isolated from the support;
• a substrate having a first portion and a second portion, the substrate bonded to the support;
• a first semiconductor chip having a first surface and a second surface, wherein a source bond pad extends from a first portion of the first surface, a drain bond pad extends from a second portion of the first surface, and a gate bond pad extends from a third portion of the first surface, the second surface bonded to the first portion of the substrate, the drain bond pad coupled to the surface of the support, wherein the first semiconductor chip is configured from a III-N semiconductor material;
• a first electrical interconnect having a first end and a second end, the first end of the first electrical interconnect coupled to the source bond pad of the first semiconductor chip and the second end of the first electrical interconnect coupled to the second portion of the substrate;
• a second semiconductor chip electrically coupled to the second end of the first electrical interconnect, the second semiconductor chip comprising a diode having a cathode and an anode;
• and
• a second electrical interconnect having a first end and a second end, the first end of the second electrical interconnect coupled to the anode lead and the second end of the second electrical interconnect coupled to the anode of the second semiconductor chip.