Through-silicon vias for heterogeneous integration of semiconductor device structures
AssigneeGlobalfoundries Inc.
InventorsSiva P. Adusumilli, Steven M. Shank
Life of this patent
Estimating the term…
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to through-silicon vias (TSV) for heterogeneous integration of semiconductor device structures and methods of manufacture. The structure includes: a plurality of cavity structures provided in a single substrate; at least one optical device provided on two sides of the single substrate and between the plurality of cavity structures; and a through wafer optical via extending through the substrate, between the plurality of cavity structures and which exposes a backside of the at least one optical device.
Claims19
A structure comprising:
- a plurality of enclosed cavity structures provided in a single substrate;
- at least one optical device provided on two sides of the single substrate and between the plurality of enclosed cavity structures;
- and
- a through wafer optical via extending through the substrate, between the plurality of enclosed cavity structures and which exposes a backside to the at least one optical device,
- wherein the plurality of enclosed cavity structures have walls formed from semiconductor material of the single substrate and sealed with a reflowed epitaxial material at an upper portion.
A structure comprising:
- at least one optical device provided on a substrate and between a plurality of cavity structures;
- a through wafer optical via extending through the substrate, between the plurality of cavity structures;
- a deep trench isolation and SiGe seal adjacent to the through wafer optical via which provides a bottom waveguide cladding;
- and
- a shallow trench isolation adjacent to the least one optical device which provides side waveguide cladding,
- wherein the at least one optical device is a plurality of optical devices on both sides of the substrate, the plurality of optical devices include a waveguide structure and a resonator on a first side of the substrate and a waveguide structure on a second side of the substrate, and the through wafer optical via extends through the substrate and contacts a backside of the resonator.
A method comprising:
- forming multi-layer semiconductor devices on a single substrate;
- and
- forming a through wafer optical via extending through the single substrate and which contacts to a backside of an optical device of the multi-layer semiconductor devices on a first side of the single substrate, wherein the forming multi-layer semiconductor devices on a single substrate comprises:
- forming a plurality of cavity structures in the single substrate;
- and
- forming a plurality of optical devices on both sides of the single substrate and between the plurality of cavity structures, wherein the plurality of optical devices includes a waveguide structure and a resonator on a first side of the single substrate and a waveguide structure on a second side of the single substrate, and
- wherein the through wafer optical via is formed between the plurality of cavity structures and exposes a backside of at least one of the plurality of optical devices.
Dependencies are inferred from the claim text.