Semiconductor device and manufacturing method thereof

A semiconductor device, comprising:

• a first semiconductor wire structure horizontally extending and having a channel region, and a source region and a drain region, which are disposed at ends of the channel region in a horizontal direction;
• and
• a second semiconductor wire structure horizontally extending and having a channel region, and a source region and a drain region, which are disposed at ends of the channel region in a horizontal direction, wherein:
• a source contact layer is formed over the source region of the first semiconductor wire structure and the source region of the second semiconductor wire structure,
• the source contact layer is embedded in a dielectric layer,
• an isolation insulating layer is disposed between the dielectric layer and a substrate,
• a bottom of the source region of the first semiconductor wire structure and a bottom of the source region of the second semiconductor wire structure are separated from the substrate by an insulating layer made of a different material than the isolation insulating layer and the dielectric layer,
• a bottom of the drain region of the first semiconductor wire structure and a bottom of the drain region of the second semiconductor wire structure are separated from the substrate by the insulating layer,
• the substrate includes a first protrusion below the source region of the first semiconductor wire structure and a second protrusion below the source region of the second semiconductor wire structure, and
• the insulating layer is disposed between the bottom of the source region of the first semiconductor wire structure and the first protrusion and between the bottom of the source region of the second semiconductor wire structure and the second protrusion.

A semiconductor device, comprising:

• semiconductor wire structures horizontally extending over a substrate, each of which have a channel region, and a source region and a drain region, which are disposed at ends of the channel region in a horizontal direction, wherein:
• a source contact layer is formed over the source region wrapping around the semiconductor wires,
• the source contact layer is embedded in an dielectric layer,
• an isolation insulating layer is disposed between the dielectric layer and the substrate,
• a bottom of the source region is separated from the substrate by an insulating layer made of a different material than the isolation insulating layer and the dielectric layer, and a bottom of the drain region is separated from the substrate by the insulating layer,
• the substrate includes a protrusion below the source region, and
• the insulating layer is disposed between the bottom of the source/drain region and the protrusion.