Semiconductor substrate production systems and related methods
AssigneeSemiconductor Components Industries, LLC
InventorMichael J. Seddon
Life of this patent
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Abstract
Implementations of a method of separating a wafer from a boule including semiconductor material may include: creating a damage layer in a boule comprising semiconductor material. The boule may have a first end and a second end. The method may include cooling the first end of the boule and heating the second end of the boule. A thermal gradient may be formed between the cooled first end and the heated second end. The thermal gradient may assist a silicon carbide wafer to separate from the boule at the damage layer.
Claims20
A method of separating a wafer from a boule comprising a semiconductor material, the method comprising:
- creating a damage layer in a boule comprising semiconductor material, wherein the boule has a first end and a second end;
- and
- cooling the first end of the boule;
- wherein a thermal gradient between the first end and the second end assists a silicon carbide wafer to separate from the boule at the damage layer.
A method of separating a wafer from a boule of silicon carbide, the method comprising:
- creating a damage layer in a boule of silicon carbide, wherein the boule has a first end and a second end;
- applying a material onto the second end of the boule;
- and
- heating the material at the second end of the boule;
- wherein a thermal gradient caused by heating the second end of the boule assists a silicon carbide wafer to separate from the boule at the damage layer.
A method of separating a wafer from a boule of silicon carbide, the method comprising:
- cooling or heating an end of a boule;
- creating a damage layer in a boule of silicon carbide, wherein the boule has a first end and a second end;
- creating a thermal gradient between the first end and the second end of the boule;
- and
- mechanically separating a silicon carbide wafer from the boule at the damage layer.
Dependencies are inferred from the claim text.