Method for manufacturing semiconductor device
AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorsTakahito Nakajima, Shinya Ito
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Abstract
A method for manufacturing a semiconductor device according to an embodiment includes forming a first insulating film on a semiconductor substrate, the first insulating film being patterned; forming a trench in the semiconductor substrate using the first insulating film as a mask; depositing a second insulating film in the trench and on the first insulating film; removing the second insulating film on the first insulating film using a CMP method; removing a portion of the first insulating film; removing a portion of the second insulating film using isotropic etching; and removing a remaining portion of the first insulating film.
Claims4
A method for manufacturing a semiconductor device, comprising:
- forming a first insulating film on a semiconductor substrate, the first insulating film being patterned;
- forming a trench in the semiconductor substrate using the first insulating film as a mask;
- depositing a second insulating film in the trench and on the first insulating film;
- depositing a third insulating film on the second insulating film;
- removing the second insulating film and the third insulating film on the first insulating film using a CMP method;
- removing a portion of the second insulating film and a portion of the third insulating film using isotropic etching;
- and
- removing the first insulating film, wherein an etching rate of the third insulating film during the isotropic etching is lower than an etching rate of the second insulating film.
Dependencies are inferred from the claim text.