Process kit erosion and service life prediction

A system, comprising:

• a processor;
• a semiconductor processing chamber having one or more sensors, each sensor in communication with the processor;
• and
• a memory storing program code, which, when executed on the processor, performs an operation for monitoring a service life of a chamber component, the operation comprising:
• receiving one or more power measurements of a semiconductor processing chamber from one or more sensors positioned about the semiconductor processing chamber, each sensor monitoring a respective power measurement, wherein receiving one or more power measurements comprises:
• receiving a first power measurement directed to a current of DC bias power from a first sensor;
• receiving a second power measurement directed to a voltage of DC bias power from a second sensor;
• and
• receiving a third power measurement directed to a DC bias match position from a third sensor;
• comparing the one or more power measurements to one or more threshold values corresponding to the service life of the chamber component, wherein each power measurements has a respective threshold value;
• determining whether the one or more power measurements exceed the one or more threshold values;
• and
• responsive to determining that the one or more power measurements exceed the threshold values, issuing a notice of a state of the chamber component.

A computer readable storage medium having stored thereon instructions that, when executed by a processor, cause the processor to perform a method of monitoring a service life of a chamber component, the method comprising:

• receiving one or more power measurements of a semiconductor processing chamber from one or more sensors positioned about the semiconductor processing chamber, each sensor monitoring a respective power measurement, wherein receiving one or more power measurements comprises:
• receiving a first power measurement directed to a current of DC bias power from a first sensor;
• receiving a second power measurement directed to a voltage of DC bias power from a second sensor;
• and
• receiving a third power measurement directed to a DC bias match position from a third sensor;
• comparing the one or more power measurements to one or more threshold values corresponding to the service life of the chamber component, wherein each power measurements has a respective threshold value;
• determining whether the one or more power measurements exceed the one or more threshold values;
• and
• responsive to determining that the one or more power measurements exceed the threshold values, issuing a notice of a state of the chamber component.