Semiconductor device, tool, and method of manufacturing
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMeng-Hsien Li, Hsin-Hsien Lu
Life of this patent
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Abstract
A semiconductor device is manufactured using a cleaning process. The cleaning process utilizes a semiconductor manufacturing tool that has a wet cleaning section and a plasma cleaning section. The semiconductor device is placed within a wet cleaning chamber within the wet cleaning section, where a wet cleaning process is performed. Once completed, and without breaking atmosphere, the semiconductor device is removed from the wet cleaning section and placed within a plasma cleaning chamber within the plasma cleaning section. A plasma clean is then performed.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming an opening through a dielectric layer to expose a conductive element of a semiconductor wafer, the opening exposing first sidewalls of the dielectric layer;
- placing the semiconductor wafer into a first processing tool;
- wet cleaning the opening within the first processing tool using a first etchant comprising an oxidizer and a solvent, the oxidizer comprising hydrogen peroxide, ozone water, or phosphate salt, wherein the first sidewalls of the dielectric layer are exposed by the opening during the wet cleaning;
- plasma cleaning the opening within the first processing tool after the wet cleaning, wherein the first sidewalls of the dielectric layer are exposed by the opening during the plasma cleaning;
- and
- forming a barrier layer along the first sidewalls of the dielectric layer and along an upper surface of the conductive element after the wet cleaning and the plasma cleaning, the barrier layer contacting the upper surface of the conductive element.
A method of manufacturing a semiconductor device, the method comprising:
- exposing a conductive layer disposed in a first dielectric layer of a semiconductor wafer by forming an opening through a second dielectric layer over the conductive layer;
- removing residue by contacting a liquid etchant to the second dielectric layer and the conductive layer, wherein the residue comprises a fluorinated polymer, and the liquid etchant comprises hydrogen peroxide, ozone water, or phosphate salt, wherein the contacting the liquid etchant is performed in a first wet etching chamber of a first processing tool, wherein during the removing the residue, the liquid etchant contacts sidewalls of the second dielectric layer exposed by the opening;
- performing a plasma cleaning after the removing the residue, wherein the performing the plasma cleaning is performed within a plasma treatment chamber of the first processing tool, wherein the sidewalls of the second dielectric layer are exposed by the opening during the plasma cleaning;
- and
- forming a barrier layer in the opening after performing the plasma cleaning, the barrier layer extending along and contacting an upper surface of the conductive layer and the sidewalls of the second dielectric layer.
A method of cleaning a semiconductor wafer, the method comprising:
- placing the semiconductor wafer onto a spin chuck, the semiconductor wafer having a conductive feature embedded in a first dielectric layer and a second dielectric layer over the conductive feature, wherein the second dielectric layer has an opening that exposes the conductive feature and exposes first sidewalls of the second dielectric layer;
- dispensing a wet etchant onto the semiconductor wafer while the semiconductor wafer is spinning, the wet etchant in direct contact with the first sidewalls of the second dielectric layer, the wet etchant comprising an oxidizer and an organic solvent, the oxidizer comprising hydrogen peroxide, ozone water, or phosphate salt;
- removing the semiconductor wafer from the spin chuck and placing the semiconductor wafer onto a mounting platform within a plasma treatment chamber without breaking to an external atmosphere;
- plasma treating the first sidewalls of the second dielectric layer using a gas source comprising diazene (N2H2) or hydrazine (N2H4);
- and
- forming a barrier layer lining the first sidewalls of the second dielectric layer after the plasma treating, wherein the barrier layer extends along and contacts an upper surface of the conductive feature facing the second dielectric layer.
Dependencies are inferred from the claim text.