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US 10,770,300 B2Granted
Remote hydrogen plasma titanium deposition to enhance selectivity and film uniformity
AssigneeApplied Materials, Inc.
InventorsTakashi Kuratomi, Avgerinos V. Gelatos, I-Cheng Chen, Faruk Gungor
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Abstract
Methods and apparatus to selectively deposit metal films (e.g., titanium films) are described. One of the precursors is energized to form ions and radicals of the precursor. The precursors flow through separate channels of a dual channel gas distribution assembly to react in a processing region above a substrate.
Claims15
A processing method comprising:
- flowing a first precursor into a volume in a processing chamber, the volume bounded by a chamber top and a gas distribution assembly;
- energizing the first precursor in the volume to form H+ and H* species and allowing the first precursor to flow through first fluid channels formed in the gas distribution assembly into a processing region in the processing chamber;
- and
- flowing a second precursor comprising a metal halide through the gas distribution assembly through second fluid channels into the processing region to react the first precursor in the processing region, wherein the metal halide and the H+ and H* species react to deposit a metal film on a first surface and a second surface of a substrate and unreacted metal halide species etch the metal film formed on the second surface to selectively deposit the metal film on the first surface with a selectivity greater than or equal to about 10:1.
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A processing method comprising:
- positioning a substrate with a first surface and a second surface different from the first surface in a processing region of a processing chamber;
- flowing an energized first precursor comprising H+ and H* species through a dual channel gas distribution assembly into a processing region of a processing chamber;
- flowing a second precursor comprising a metal halide through the dual channel gas distribution assembly into the processing region;
- and
- reacting the energized first precursor and the second precursor in the processing region to deposit a film on a first surface and a second surface different from the first surface, wherein unreacted second precursor etches the film from the second surface to selectively form a film on the first surface with a selectivity greater than or equal to about 10:1.
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Dependencies are inferred from the claim text.