Semiconductor device and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLi-Jung Liu, Chun-Sheng Liang, Shu-Hui Wang
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Abstract
A semiconductor device includes a semiconductor fin and a gate structure. The semiconductor fin extends along a first direction above a substrate. The gate structure extends across the semiconductor fin along a second direction substantially perpendicular to the first direction. The gate structure includes a chlorine-containing N-work function metal layer wrapping around the semiconductor fin, and a filling metal over and in contact with the chlorine-containing N-work function metal layer.
Claims20
A semiconductor device, comprising:
- a semiconductor fin extending along a first direction above a substrate;
- and
- a gate structure extending across the semiconductor fin along a second direction substantially perpendicular to the first direction, the gate structure comprising a chlorine-containing N-work function metal layer wrapping around the semiconductor fin, and a filling metal over and in contact with the chlorine-containing N-work function metal layer.
A semiconductor device, comprising:
- a semiconductor fin protruding above a substrate;
- an N-type source epitaxy structure and an N-type drain epitaxy structure on the semiconductor fin;
- and
- a gate structure over the semiconductor fin, the gate structure comprising a high-k gate dielectric layer and a chlorine-containing N-work function metal layer spaced from the high-k gate dielectric layer and laterally between the N-type source epitaxy structure and the N-type drain epitaxy structure.
A method, comprising:
- forming a fin extending from a semiconductor substrate;
- forming a shallow trench isolation (STI) structure laterally surrounding a lower portion of the fin;
- forming a dummy gate structure across an N-type field effect transistor (NFET) channel region in the fin;
- forming an N-type source epitaxy structure and an N-type drain epitaxy structure respectively on opposite sides of the NFET channel region;
- and
- replacing the dummy gate structure with a replacement gate structure, the replacing comprising forming a titanium nitride (TiN) layer of the replacement gate structure on the NFET channel region, and a chlorine-containing N-work function metal layer of the replacement gate structure over the TiN layer on the NFET channel region.
Dependencies are inferred from the claim text.