Method to form ultrashallow junctions using atomic layer deposition and annealing

A method comprising:

• depositing a first layer on a layer of a substrate using atomic layer deposition (ALD), the layer including a material selected from a group consisting of silicon (Si), germanium (Ge) and silicon germanium (Si1-xGex), and wherein the first layer includes phosphorus, antimony, and oxygen;
• wherein depositing the first layer includes depositing one or more ALD monolayers of phosphorus, one or more ALD monolayers of antimony, and one or more ALD monolayers of oxide;
• and
• annealing the substrate to drive the antimony and the phosphorus from the first layer into the layer of the substrate to create a junction,
• wherein annealing the substrate comprises annealing the substrate sequentially after depositing the first layer.

A method comprising:

• depositing a first layer on a layer of a substrate using atomic layer deposition (ALD), the layer including a material selected from a group consisting of silicon (Si), germanium (Ge) and silicon germanium (Si1-xGex), and wherein the first layer includes phosphorus, antimony, and oxygen;
• wherein depositing the first layer includes depositing one or more ALD monolayers of phosphorus, one or more ALD monolayers of antimony, and one or more ALD monolayers of oxide;
• and
• annealing the substrate to drive the antimony and the phosphorus from the first layer into the layer of the substrate to create a junction,
• wherein the junction is an ultrashallow junction having a depth in a range from 4 nm to 10 nm after annealing.

A method comprising:

• depositing a first layer on a layer of a substrate using atomic layer deposition (ALD), wherein the substrate includes trenches having an aspect ratio that is greater than 4:1, the layer including a material selected from a group consisting of silicon (Si), germanium (Ge) and silicon germanium (Si1-xGex), and wherein the first layer includes phosphorus, antimony, and oxygen;
• wherein depositing the first layer includes depositing one or more ALD monolayers of phosphorus, one or more ALD monolayers of antimony, and one or more ALD monolayers of oxide;
• and
• annealing the substrate to drive the antimony and the phosphorus from the first layer into the layer of the substrate to create a junction.