Plasma-enhanced anneal chamber for wafer outgassing

A substrate processing apparatus, comprising:

• a first thermal process chamber defining a first process volume;
• a second thermal process chamber defining a second process volume;
• a first remote plasma source coupled to the first thermal process chamber by a first plasma conduit configured to delive a plasma from the first remote plasma source to a first showerhead disposed in the first process volume;
• a second plasma conduit coupled between the first remote plasma source and the second process chamber, the second plasma conduit configured to deliver the plasma from the first remote plasma source to a second showerhead disposed in the second process volume;
• a plasma flow controller disposed in the second plasma conduit;
• a second remote plasma source coupled to the second process chamber by a third plasma counduit configured to deliver a plasma from the second remote plasma source to the second showerhead;
• a fourth plasma conduit coupled between the second remote plasma source and the first process chamber, the fourth plasma counduit configured to deliver the plasma from the second remote plasma source to the first showerhead;
• an exhaust coupled to the first thermal process chamber by a first exhaust conduit and to the second thermal process chamber by a second exhaust conduit;
• a common exhaust conduit coupling the first exhaust conduit and the second exhaust conduit to the exhaust;
• a total exhaust flow controller disposed in the common exhaust conduit;
• a chamber exhaust flow controller disposed in the first exhaust conduit;
• a first pressure sensor disposed in the first thermal process chamber;
• a second pressure sensor disposed in the second thermal process chamber.