Plasma processing method and plasma processing apparatus

A plasma processing method comprising:

• a first film forming step of forming a carbon-containing film on surfaces of components in a chamber by using a plasma of a carbon-containing gas;
• a second film forming step of forming a silicon-containing film whose film thickness is determined based on a film thickness of the carbon-containing film on a surface of the carbon-containing film by a silicon-containing gas;
• a plasma processing step of processing a target object loaded into the chamber by using a plasma of a processing gas after the formation of the silicon-containing film;
• a first removal step of removing the silicon-containing film from the surface of the carbon-containing film by using a plasma of a fluorine-containing gas after the target object processed by the plasma is unloaded from the chamber;
• and
• a second removal step of removing the carbon-containing film from the surfaces of the components by using a plasma of an oxygen-containing gas,
• wherein the film thickness of the silicon-containing film determined in the second film forming step is greater than or equal to a predetermined fraction of the film thickness of the carbon-containing film to maintain a balance between a film stress of the silicon-containing film and a film stress of the carbon-containing film.