Substrate processing method

A substrate processing method comprising:

• plasma processing a first substrate of a set of first substrates placed on a susceptor, then applying power to an RF electrode facing the susceptor for only a predetermined static electricity removal time to reduce an amount of charge of the first substrate by generating plasma, and then measuring at least a first self-bias voltage of a plurality of self-bias voltages of the RF electrode when susceptor pins are made to protrude from a top surface of the susceptor and lift up the first substrate while the predetermined static electricity removal time is changed to a first subsequent static electricity removal time to be used for a subsequent first substrate of the set of first substrates and then plasma processing the subsequent first substrate of the set of first substrates placed on the susceptor, then applying the first subsequent static electricity removal time to the subsequent first substrate of the set of first substrates, and then measuring at least a second self-bias voltage of a plurality of self-bias voltages of the RF electrode when susceptor pins are made to protrude from the top surface of the susceptor and lift up the subsequent first substrate;
• determining from the plurality of self-bias voltages a self-bias voltage having a minimum absolute value;
• subjecting a second substrate placed on the susceptor to the same plasma processing as the plasma processing for the subsequent first substrate;
• and
• determining a second subsequent static electricity removal time from the self-bias voltage having the minimum absolute value, and applying the power to the RF electrode for only the second subsequent determined static electricity removal time, thereby reducing an amount of charge of the second substrate.