Spin-orbit-torque magnetization rotational element, spin-orbit-torque magnetoresistance effect element, and magnetic memory

A spin-orbit-torque magnetization rotational element comprising:

• a spin-orbit-torque wiring extending in a first direction;
• a first ferromagnetic layer laminated on one surface of the spin-orbit-torque wiring in a second direction that crosses the first direction;
• and
• a first electrode and a second electrode connected to the spin-orbit-torque wiring at positions sandwiching the first ferromagnetic layer in a plan view in the second direction, wherein:
• at least one of the first electrode and the second electrode includes a switching layer configured to shift between a high resistance state and a low resistance state with a predetermined threshold voltage as a boundary to allow an electric current to flow bidirectionally;
• the switching layer is arranged to cross the second direction;
• relationships of (i) and (ii) are satisfied:
• Vr/Ic<Rr+RON (i)
• RSOT+2RON<Vw/Ic (ii)
• Rr being a resistance value of the spin-orbit-torque wiring between the first electrode or the second electrode energized in reading and the first ferromagnetic layer,
• Ron being a resistance value of the switching layer of the first electrode or the second electrode energized in reading in the low resistance state,
• RSOT being a resistance value of the spin-orbit-torque wiring,
• Vw being a voltage applied between the first electrode energized in writing and the second electrode in writing,
• Vr being a voltage applied between the first electrode or the second electrode energized in reading;
• and the first ferromagnetic layer in reading, and
• Ic being a critical threshold current required for a magnetization to be rotated in the first ferromagnetic layer;
• and
• the switching layer is an alloy containing a chalcogen element and an additional element selected from the group consisting of aluminum, magnesium, boron, yttrium and rare earth element.