Method of reducing injection type of program disturb during program pre-charge in memory device

A method, comprising:

• performing a pre-charge phase of a program loop of a program operation for a set of memory cells, wherein the set of memory cells are arranged in NAND strings in a block, each NAND string comprising a channel extending from a source end to a drain end of the NAND string, a respective bit line is connected to the drain end of each NAND string, and a plurality of word lines are connected to the set of memory cells and comprise a selected word line, source-side word lines of the selected word line and drain-side word lines of the selected word line, the performing the pre-charge phase comprises:
• applying a positive voltage to the bit lines to pre-charge a region of the channel adjacent to the drain-side word lines of the selected word line, and
• during the applying of the positive voltage to the bit lines, applying a voltage to a subset of the source-side word lines which is greater than a voltage applied to remaining word lines of the source-side word lines, the voltage applied to the subset of the source-side word lines increases a floating voltage of a region of the channel adjacent to the subset of the source-side word lines to a level which is higher than a floating voltage of a region of the channel adjacent to the remaining word lines of the source-side word lines.