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US 10,770,151 B2Granted
Semiconductor memory device and operating method thereof
AssigneeSK hynix Inc.
InventorsDong Uk Lee, Jae Hyuk Bang
Life of this patent
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Abstract
In a method for operating a semiconductor memory device including a plurality of memory blocks, the method includes: receiving a read command for a first memory block among the plurality of memory blocks; referring to a block read count value corresponding to the first memory block; determining whether the block read count value has reached a first threshold value; and performing a read operation on the first memory block, based on the determined result.
Claims9
A method for operating a semiconductor memory device including a plurality of memory blocks, the method comprising:
- receiving a read command for a memory block among the plurality of memory blocks;
- referring to a block read count value corresponding to the memory block;
- determining whether the block read count value has reached a threshold value;
- and
- performing a read operation on the memory block based on a result of the determining operation,
- wherein the performing of the read operation on the memory block when it is determined that the block read count value reaches the threshold value, includes:
- performing a threshold voltage increase operation on a select program state of the memory block;
- and
- performing the read operation on the memory block.
6 more elements
A semiconductor memory device comprising:
- a memory cell array including a plurality of memory blocks;
- a peripheral circuit configured to perform any one of a read operation, a write operation, and an erase operation on the memory cell array;
- a block read counter configured to store a block read count value of each of the plurality of memory blocks;
- and
- control logic configured to control operations of the peripheral circuit and the block read counter,
- wherein, when a read command for a memory block among the plurality of memory blocks is received, the control logic controls the peripheral circuit and the block read counter to perform a read operation on the memory block, based on a block read count value of the memory block,
- wherein, when the block read count value of the memory block reaches a second threshold value,
- the control logic controls the peripheral circuit to increase a threshold voltage distribution in a select program state of the memory block and perform the read operation on the memory block.
5 more elements
Dependencies are inferred from the claim text.