Non-volatile memory device and initialization information reading method thereof

A read method of a non-volatile memory device, the read method comprising:

• an initialization information read operation;
• and
• a read operation, wherein:
• the initialization read operation includes:
• detecting power-up;
• in response to the detected power-up, reading initialization information for the non-volatile memory device stored in memory cells of the non-volatile memory device;
• and
• when reading the initialization information:
• generating a first read voltage that is provided to a selected word line of a plurality of word lines connected to the memory cells, and
• generating a second read voltage that is provided to unselected word lines of the plurality of word lines connected to the memory cells, wherein the magnitude of the second read voltage exceeds the magnitude of the first read voltage and is less than or equal to the magnitude of a source voltage used to generate each of the first read voltage and the second read voltage, and
• the read operation includes:
• generating the first read voltage from the source voltage,
• generating, from the source voltage, a third read voltage whose magnitude exceeds that of the source voltage,
• applying the first read voltage to another selected word line, among the word lines, and
• applying the third read voltage to other unselected word lines, among the word lines, to thereby read non-initialization information from other memory cells of the non-volatile memory device.

A method comprising:

• a non-volatile memory device detecting a power-up state for the non-volatile memory device;
• in response to detecting the power-up state, the non-volatile memory device reading initialization information for the non-volatile memory device which is stored in first memory cells of a memory cell array of the non-volatile memory device and storing the initialization information for the non-volatile memory device in a set register of the non-volatile memory device;
• and
• the non-volatile memory device reading non-initialization information for the non-volatile memory device which is stored in second memory cells of the memory cell array, wherein:
• reading the initialization information for the non-volatile memory device which is stored in the first memory cells of the memory cell array of the non-volatile memory device comprises:
• applying to selected word lines connected to the first memory cells a first read voltage having a first read voltage level for discriminating between erase states and program states of the first memory cells;
• and
• while applying the first read voltage to the selected word lines, applying to unselected word lines which are not connected to the first memory cells a second read voltage having a second read voltage level which is less than voltage levels of the program states of the first memory cells,
• the magnitude of the second read voltage exceeds the magnitude of the first read voltage and is less than or equal to the magnitude of a source voltage used to generate each of the first read voltage and the second read voltage, and
• reading the non-initialization information for the non-volatile memory device which is stored in the second memory cells of the memory cell array comprises:
• generating the first read voltage from the source voltage,
• generating, from the source voltage, a third read voltage whose magnitude exceeds that of the source voltage,
• applying the first read voltage to another selected word line, among the word lines, and
• applying the third read voltage to other unselected word lines, among the word lines, to thereby read the non-initialization information from other memory cells of the non-volatile memory device.