Pellicle for EUV lithography and method of fabricating the same
AssigneeS&S TECH Co., Ltd.
InventorsKee-Soo Nam, Chang-Hun Lee, Ju-Hee Hong, Chul-Kyun Park
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AssigneeS&S TECH Co., Ltd.
InventorsKee-Soo Nam, Chang-Hun Lee, Ju-Hee Hong, Chul-Kyun Park
Estimating the term…
Disclosed are a pellicle for an extreme ultraviolet (EUV) lithography, which is excellent in transmittance of EUV exposure light and mechanical strength, and a method of fabricating the same. The pellicle includes a support layer pattern; a buried oxide layer pattern formed on the support layer pattern; and a pellicle layer provided being supported by the buried oxide layer pattern. The pellicle may further include a reinforcement layer for reinforcing the mechanical strength of the pellicle layer, an auxiliary layer for additionally supplementing the mechanical strength of the reinforcement layer, and a heat dissipation layer for dissipating heat of the pellicle layer.
A pellicle for extreme ultraviolet (EUV) lithography, the pellicle comprising:
A method of fabricating a pellicle for extreme ultraviolet lithography, the method comprising:
A method of fabricating a pellicle for extreme ultraviolet lithography, the method comprising:
Dependencies are inferred from the claim text.