Aqueous copper plating baths and a method for deposition of copper or copper alloy onto a substrate
AssigneeAtotech Deutschland GmbH
InventorsHeiko Brunner, Lars Kohlmann, Agnieszka Witczak, Olivier Mann
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Abstract
The present invention relates to bisurea derivatives and their use in aqueous plating baths for copper and copper alloy deposition in the manufacture of printed circuit boards, IC substrates, semiconducting and glass devices for electronic applications. The plating bath according to the present invention comprises at least one source of copper ions and a bisurea derivative. The plating bath is particularly useful for filling recessed structures with copper and build-up of pillar bump structures.
Claims19
An aqueous copper plating bath for electrolytic copper or copper alloy deposition comprising
- at least one source of copper ions;
- at least one acid;
- and
- at least one bisurea derivative comprising a bisurea building block according to formula (I)
- wherein A represents a unit derived from a diurea compound of the following formula (A1)
- wherein
- X1 and X2 are divalent residues independently from each other selected from the following group consisting of
- wherein R1 and R2 are monovalent residues each selected independently from the group consisting of hydrogen, alkyl and polyoxyalkylene;
- Y is selected from CH2, O and S;
- c is an integer ranging from 1 to 6;
- c′ is an integer ranging from 1 to 6;
- b is an integer ranging from 1 to 5;
- b′ is an integer ranging from 1 to 5;
- Z is a divalent bridging moiety which is selected from the group consisting of alkylene, arylene and alkylene oxide compound whereby said alkylene oxide compound is represented by the following formula
- —(CH2)d—[CH(R3)—CH2—O]e—(CH2)f—(CH(CH3))f′—,
- wherein d is an integer ranging from 0 to 3;
- e is an integer ranging from 1 to 100;
- and
- f is an integer ranging from 1 to 3;
- f′ is 0 or 1;
- each R3 is independently from each other selected from the group consisting of alkyl, aryl and hydrogen;
- a is an integer and ranges from 1 to 100;
- and
- D is a divalent residue and is selected from the group consisting of
- —CH2—CH(OH)—CH2—,
- —CH2—CH(SH)—CH2—,—(CH2)g—[CH(R4)—CH2—O]h—(CH2)i— and
- —CH2—CH(OH)—(CH2)j—[CH(R5)—CH2—O]k—(CH2)l—CH(OH)—CH2—
- wherein g is an integer ranging from 0 to 4;
- h is an integer ranging from 1 to 100;
- i is an integer ranging from 1 to 4;
- each R4 is independently from each other selected from the group consisting of alkyl, aryl and hydrogen;
- j is an integer ranging from 1 to 4;
- k is an integer ranging from 1 to 100;
- l is an integer ranging from 1 to 4;
- each R5 is independently from each other selected from the group consisting of alkyl, aryl and hydrogen
- and if a is 2 or greater each A and each D are selected independently from each other
- and wherein the aqueous copper plating bath is free of added zinc ions.
Dependencies are inferred from the claim text.