Chemical mechanical polishing slurry composition for polishing polycrystalline silicon film

A chemical mechanical polishing slurry composition for polishing a polycrystalline silicon film, comprising:

• a solvent;
• a polishing agent;
• a pH adjuster;
• and
• at least one additive selected from the group consisting of a compound represented by Chemical Formula 1 below, a compound represented by Chemical Formula 2 below, and a tautomer thereof:
• in Chemical Formula 1,
• R1 is hydrogen, —SH, a linear or branched C1-C6 alkyl, a linear or branched C1-C6 alkylamine, or a linear or branched C1-C6 alkylthiol, and
• R2 is hydrogen, —NH2, —NHCH3, a linear or branched C1-C6 alkyl or a C5-C10 aryl,
• in Chemical Formula 2, R3 is hydrogen or a linear or branched C1-C20 alkyl,
• R4 is a linear or branched C2-C8 alkylene,
• R5 is hydrogen or
• R6 is a linear or branched C1-C8 alkylene,
• R7 is hydrogen or a linear or branched C1-C20 alkyl, and
• n is 0 or 1,
• wherein the pH of the polishing slurry composition is 2 to 5.