Eutectic bonding with ALGe

A method of sealing a MEMS device formed in a first semiconductor substrate using a second semiconductor substrate, the method comprising:

• forming a Silicide layer either in or above the first substrate;
• forming an Aluminum Germanium structure above the Silicide layer of the first substrate;
• forming a Silicide layer either in or above a substrate of the second substrate;
• covering the first substrate with the second substrate so as to cause the Aluminum Germanium structure of the first substrate to contact the Silicide layer of the second substrate;
• and
• performing eutectic bonding between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form a AlGeSi sealant thereby to seal the MEMS device.

A method of sealing a MEMS device formed in a first semiconductor substrate using a second semiconductor substrate, the method comprising:

• forming a Silicide layer either in or above the first substrate;
• forming a Silicide layer either in or above the second substrate;
• forming an Aluminum Germanium structure above the Silicide layer of the second substrate;
• covering the first substrate with the second substrate so as to cause the Aluminum Germanium structure of the second substrate to contact the Silicide layer of the first substrate;
• and
• performing eutectic bonding between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form a AlGeSi sealant thereby to seal the MEMS device.

A method of sealing a MEMS device formed in a first semiconductor substrate using a second semiconductor substrate, the method comprising:

• forming a Silicide layer either in or above a substrate of the first substrate;
• forming an Aluminum Germanium structure above the Silicide layer of the first substrate;
• forming a Silicide layer either in or above a substrate of the second substrate;
• forming an Aluminum Germanium structure above the Silicide layer of the second substrate;
• covering the first substrate with the second substrate so as to cause the Aluminum Germanium structure of the first substrate to contact the Aluminum Germanium structure of the first substrate;
• and
• performing eutectic bonding between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form a AlGeSi sealant thereby to seal the MEMS device.

A method of sealing a MEMS device formed in a first semiconductor substrate using a second semiconductor substrate, the method comprising:

• forming a Silicide layer either in or above a substrate of the first substrate;
• forming an Aluminum Germanium structure above the Silicide layer of the first substrate;
• forming a Silicide layer either in or above a substrate of the second substrate;
• forming an Aluminum structure above the Silicide layer of the second substrate;
• covering the first substrate with the second substrate so as to cause the Aluminum Germanium structure of the first substrate to contact the Aluminum structure of the second substrate;
• and
• performing eutectic bonding between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form a AlGeSi sealant thereby to seal the MEMS device.

A method of sealing a MEMS device formed in a first semiconductor substrate using a second semiconductor substrate, the method comprising:

• forming a Silicide layer either in or above a substrate of the first substrate;
• forming a Germanium structure above the Silicide layer of the first substrate;
• forming a Silicide layer either in or above a substrate of the second substrate;
• forming an Aluminum Germanium structure above the Silicide layer of the second substrate;
• covering the first substrate with the second substrate so as to cause the Aluminum Germanium structure of the second substrate to contact the Germanium structure of the first substrate;
• and
• performing eutectic bonding between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form a AlGeSi sealant thereby to seal the MEMS device.