Self-aligned ion beam etch sputter mask for magnetoresistive random access memory
AssigneeInternational Business Machines Corporation
InventorsSteve Holmes, Bruce B. Doris, Hyun K. Lee
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Abstract
Embodiments of the present invention are directed to a method for fabricating a magnetoresistive random access memory (MRAM) device. A non-limiting example of the method includes depositing a dielectric layer on a contact arranged on a substrate including a magnetic tunnel junction (MTJ) pillar. The method includes reducing a width of the MTJ pillar. The method further includes depositing an encapsulation layer on the dielectric layer and the MTJ pillar.
Claims12
A method of fabricating a magnetoresistive random access memory (MRAM) device, the method comprising:
- depositing a dielectric layer on a contact arranged on a substrate comprising a magnetic tunnel junction (MTJ) pillar;
- reducing a width of the MTJ pillar;
- and
- depositing an encapsulation layer on the dielectric layer and the MTJ pillar;
- wherein reducing the width of the MTJ pillar causes a portion of the dielectric layer to redeposit onto a vertical sidewall of the MTJ pillar.
A method of fabricating a magnetoresistive random access memory (MRAM) device, the method comprising:
- depositing, by spin coating, a dielectric layer on a contact arranged on a substrate comprising a magnetic tunnel junction (MTJ) pillar;
- reducing a width of the MTJ pillar to form a gap between a vertical sidewall of the MTJ pillar and the dielectric layer;
- and
- depositing an encapsulation layer on the dielectric layer and the MTJ pillar.
Dependencies are inferred from the claim text.