Back to results
US 10,763,360 B2Granted
Ferroelectric memory device and method of manufacturing the same
AssigneeSK hynix Inc.
InventorHyangkeun Yoo
Life of this patent
Estimating the term…
Abstract
A ferroelectric memory device includes a substrate having a source region and a drain region, a first ferroelectric material layer and a second ferroelectric material layer sequentially stacked on the substrate, and a gate electrode layer disposed on the second ferroelectric material layer. The second ferroelectric material layer has an oxygen vacancy concentration different from that of the first ferroelectric material layer.
Claims9
A ferroelectric memory device comprising:
- a substrate having a source region and a drain region;
- a first ferroelectric material layer and a second ferroelectric material layer that are sequentially stacked on the substrate;
- and
- a gate electrode layer disposed on the second ferroelectric material layer,
- wherein the second ferroelectric material layer has a higher oxygen vacancy concentration than that of the first ferroelectric material layer,
- wherein a work function of the gate electrode layer is greater than an electron affinity of the second ferroelectric material layer.
3 more elements
Dependencies are inferred from the claim text.