Semiconductor device and method for manufacturing the same
AssigneeRenesas Electronics Corporation
InventorHiroshi Yanagigawa
Life of this patent
Estimating the term…
Abstract
A semiconductor device which simplifies the manufacturing process while decreasing the width of separation between a first MOS transistor area and a second MOS transistor area, and a method for manufacturing the semiconductor device. A first MOS transistor and a second MOS transistor configure a bidirectional switch. The first MOS transistor and second MOS transistor each have a vertical trench structure. A first impurity region abuts on the side wall of a first gate trench of a first MOS transistor element outside the first MOS transistor area and is electrically coupled to a first source region.
Claims8
A semiconductor device having a bidirectional switch, the semiconductor device comprising:
- a semiconductor substrate having a first surface and a second surface opposite to each other and having a first gate trench extending from the first surface toward the second surface;
- a first transistor element which includes a first drain region of a first conductivity type located in the second surface, a first source region of the first conductivity type located in the first surface, and a first gate electrode located inside the first gate trench and is included in the bidirectional switch;
- a first impurity region of a second conductivity type which abuts on a side wall of the first gate trench outside an area for the first transistor element and is electrically coupled to the first source region;
- and
- a first base region of the second conductivity type making a PN junction with the first source region and facing the first gate electrode while being insulated therefrom,
- wherein the first impurity region has a larger depth from the first surface than the first base region and has a lower impurity concentration than the first base region.
Dependencies are inferred from the claim text.