US 10,763,248 B2 · Multi-layer silicon/gallium nitride semiconductor

Abstract

The electrical and electrochemical properties of various semiconductors may limit the usefulness of various semiconductor materials for one or more purposes. A completed gallium nitride (GaN) semiconductor layer containing a number of GaN power management integrated circuit (PMIC) dies may be bonded to a completed silicon semiconductor layer containing a number of complementary metal oxide (CMOS) control circuit dies. The completed GaN layer and the completed silicon layer may be full size (e.g., 300 mm). A layer transfer operation may be used to bond the completed GaN layer to the completed silicon layer. The layer transfer operation may be performed on full size wafers. After slicing the full size wafers a large number of multi-layer dies, each having a GaN die layer transferred to a silicon die may be produced.

Claims24

Dependent claims

A compound semiconductor device;

comprising:
a completed silicon layer that includes a number of silicon dies, each of the silicon dies including at least one silicon integrated circuit;
a completed gallium nitride (GaN) layer that includes a number of GaN dies, each of the GaN dies including at least one GaN integrated circuit, the completed GaN layer bonded, via layer transfer, to the completed silicon layer such that each of the number of silicon dies lies proximate a respective one of the number of GaN dies;
and
an interconnect layer deposited on the completed GaN layer, the interconnect layer including a number of thru-GaN vias that conductively couple the at least one GaN integrated circuit on each GaN die with the at least one silicon integrated circuit on each silicon die.

2 more elements

Dependencies are inferred from the claim text.

Multi-layer silicon/gallium nitride semiconductor

Life of this patent

Multi-layer silicon/gallium nitride semiconductor

Life of this patent

Abstract

Claims24