Semiconductor device including buried insulation layer and manufacturing method thereof

A semiconductor device, comprising:

• a buried insulation layer, wherein the buried insulation layer has a first side and a second side opposite to the first side in a thickness direction of the buried insulation layer;
• a semiconductor layer disposed on a side of the buried insulation layer;
• a gate structure disposed on the semiconductor layer, wherein the semiconductor layer and the gate structure are disposed on the first side of the buried insulation layer, and the semiconductor layer comprises a body region disposed between the gate structure and the buried insulation layer;
• a source doped region and a drain doped region, wherein the source doped region and the drain doped region are disposed in the semiconductor layer at two opposite sides of the gate structure respectively;
• a contact hole penetrating the buried insulation layer and exposing a part of the body region and a part of the source doped region;
• a silicide layer disposed in the contact hole and disposed on the part of the body region and the part of the source doped region exposed by the contact hole, wherein the body region is electrically connected with the source doped region via the silicide layer;
• a first contact structure disposed on the silicide layer;
• a second contact structure penetrating the buried insulation layer and electrically connected with the drain doped region;
• and
• an insulation layer disposed at the second side of the buried insulation layer and partly disposed in the contact hole, wherein the first contact structure penetrates the insulation layer for contacting the silicide layer, and the second contact structure further penetrates the insulation layer.

A manufacturing method of a semiconductor device, comprising:

• providing a semiconductor layer disposed on a buried insulation layer;
• forming a gate structure on the semiconductor layer, wherein the semiconductor layer comprises a body region disposed between the gate structure and the buried insulation layer;
• forming a source doped region and a drain doped region in the semiconductor layer at two opposite sides of the gate structure respectively;
• forming a first contact structure penetrating the buried insulation layer and contacting a part of the body region and a part of the source doped region, wherein the first contact structure overlaps the part of the body region and the part of the source doped region in a thickness direction of the buried insulation layer;
• forming a second contact structure penetrating the buried insulation layer and electrically connected with the source doped region, wherein the body region is electrically connected with the source doped region via the first contact structure and the second contact structure;
• forming an isolation structure on the buried insulation layer, wherein the isolation structure surrounds the semiconductor layer;
• and
• forming a first connection structure on the source doped region before forming the first contact structure and forming the second contact structure, wherein the first connection structure is electrically connected with the source doped region, the second contact structure further penetrates the isolation structure and is connected with the first connection structure, and the second contact structure is electrically connected with the source doped region via the first connection structure.

A manufacturing method of a semiconductor device, comprising:

• providing a semiconductor layer disposed on a buried insulation layer;
• forming a gate structure on the semiconductor layer, wherein the semiconductor layer comprises a body region disposed between the gate structure and the buried insulation layer;
• forming a source doped region and a drain doped region in the semiconductor layer at two opposite sides of the gate structure respectively;
• forming a contact hole penetrating the buried insulation layer and exposing a part of the body region and a part of the source doped region;
• forming a silicide layer in the contact hole, wherein the silicide layer is formed on the part of the body region and the part of the source doped region exposed by the contact hole, and the body region is electrically connected with the source doped region via the silicide layer;
• forming a first contact structure on the silicide layer;
• forming a second contact structure penetrating the buried insulation layer and electrically connected with the drain doped region;
• forming an isolation structure on the buried insulation layer and the isolation structure surrounding the semiconductor layer;
• and
• forming a connection structure on the drain doped region before forming the first contact structure and forming the second contact structure, wherein the connection structure is electrically connected with the drain doped region, the second contact structure further penetrates the isolation structure and is connected with the connection structure, and the second contact structure is electrically connected with the drain doped region via the connection structure.