Vertical semiconductor devices and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKyung-Hwan Lee, Chang-Seok Kang, Yong-Seok Kim, Jun-Hee Lim, Kohji Kanamori
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AssigneeSamsung Electronics Co., Ltd.
InventorsKyung-Hwan Lee, Chang-Seok Kang, Yong-Seok Kim, Jun-Hee Lim, Kohji Kanamori
Estimating the term…
A vertical semiconductor device includes a conductive pattern structure in which insulation patterns and conductive patterns alternately and repeatedly stacked on the substrate. The conductive pattern structure includes an edge portion having a stair-stepped shape. Each of the conductive patterns includes a pad region corresponding to an upper surface of a stair in the edge portion. A pad conductive pattern is disposed to contact a portion of an upper surface of the pad region. A mask pattern is disposed on an upper surface of the pad conductive pattern. A contact plug penetrates the mask pattern to contact the pad conductive pattern.
A vertical semiconductor device comprising:
A vertical semiconductor device comprising:
A vertical semiconductor device comprising:
Dependencies are inferred from the claim text.